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2SB1167S

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onsemi 2SB1167S

onsemi 2SB1167S overview

ON Semiconductor 2SB1167S Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:PNP, Surface Moun...

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Part number or family2SB1167S
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor 2SB1167S Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:PNP, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):140, Transition Frequency-Nom (fT):130 MHz
DescriptionON Semiconductor 2SB1167S Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:PNP, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):140, Transition Frequency-Nom (fT):130 mΩz

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Product group Modules Explore Modules Explore Transistor Explore Power Bipolar Transistors
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