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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor 2SB1165S Power Bipolar Transistor, Collector-Emitter Voltage-Max:50 V, Collector Current-Max (IC):5 A, Polarity/Channel Type:PNP, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):140, Transition Frequency-Nom (fT):130 MHz
DescriptionON Semiconductor 2SB1165S Power Bipolar Transistor, Collector-Emitter Voltage-Max:50 V, Collector Current-Max (IC):5 A, Polarity/Channel Type:PNP, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):140, Transition Frequency-Nom (fT):130 mΩz
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