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DescriptionON Semiconductor NZQA6V8XV5T2 Transient Suppressor, Power Dissipation-Max:300 mW, Diode Element Material:SILICON, Breakdown Voltage-Min:6.46 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:COMMON ANODE, 4 ELEMENTS, Surface Mount:YES, Number of Elements:4, Technology:AVALANCHE
DescriptionON SEMICONDUCTOR NZQA6V8XV5T2 SOT553 QUAN ZNR
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onsemi
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