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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NZQA6V2XV5T1G Transient Suppressor, Clamping Voltage-Max:11.5 V, Power Dissipation-Max:300 mW, Breakdown Voltage-Nom:6.2 V, Diode Element Material:SILICON, Breakdown Voltage-Min:5.89 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:COMMON ANODE, 4 ELEMENTS, Surface Mount:YES, Number of Elements:4, Technology:AVALANCHE
DescriptionOn-Semiconductor NZQA6V2XV5T1G Circuit Protection, ESD Suppressor TVS Uni-Dir 4V 5-Pin SOT-553 T/R
DescriptionON SEMICONDUCTOR NZQA6V2XV5T1G REEL / MI SOT553 QUAD ARRAY TR
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onsemi
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