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NTJS3157NT4G

onsemi · Modules

onsemi NTJS3157NT4G

onsemi NTJS3157NT4G overview

ON Semiconductor NTJS3157NT4G Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE...

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Part number or familyNTJS3157NT4G
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTJS3157NT4G Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:20 V, Number of Elements:1, Drain Current-Max (Abs) (ID):3.2 A, Drain Current-Max (ID):3.2 A, Drain-source On Resistance-Max:60 mΩ
DescriptionON Semiconductor NTJS3157NT4G Discrete Semiconductor, MOSFET N-CH 20V 3.2A SOT-363
DescriptionON SEMICONDUCTOR NTJS3157NT4G NFET SC88 4A 20V TR RoHS Compliant: Yes

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