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Manufactured byonsemi
Product groupPassives
DescriptionON Semiconductor MMFT3055VLT1G Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):1.5 A, Drain Current-Max (ID):1.5 A, Drain-source On Resistance-Max:140 mΩ
DescriptionON SEMICONDUCTOR MMFT3055VLT1G NFET SOT223 60V 0.14R TR
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onsemi
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Passives
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