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MMBZ27VALT1G

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onsemi MMBZ27VALT1G

onsemi MMBZ27VALT1G overview

ON Semiconductor MMBZ27VALT1G Transient Suppressor, Clamping Voltage-Max:40 V, Reverse Current-Max:50 nA, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:27...

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Part number or familyMMBZ27VALT1G
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Manufactured byonsemi
Product groupPassives
DescriptionON Semiconductor MMBZ27VALT1G Transient Suppressor, Clamping Voltage-Max:40 V, Reverse Current-Max:50 nA, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:27 V, Diode Element Material:SILICON, Breakdown Voltage-Min:25.65 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:COMMON ANODE, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:22 V, Number of Elements:2, Technology:ZENER
DescriptionON SEMICONDUCTOR MMBZ27VALT1G ZEN SOT23 DUAL .225W 27V RoHS Compliant: Yes

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