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Manufactured byonsemi
Product groupPassives
DescriptionON Semiconductor MMBD452LT1G Microwave Mixer Diode, Diode Capacitance-Max:1.5 pF, Power Dissipation-Max:225 mW, Diode Element Material:SILICON, Diode Type:MIXER DIODE, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS, Surface Mount:YES, Number of Elements:2, Technology:SCHOTTKY
DescriptionON SEMICONDUCTOR MMBD452LT1G SS SOT23 SHKY DIO 30V TR RoHS Compliant: Yes
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onsemi
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