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MMBD330T1G

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onsemi MMBD330T1G

onsemi MMBD330T1G overview

ON Semiconductor MMBD330T1G Microwave Mixer Diode, Forward Voltage-Max (VF):600 mV, Diode Capacitance-Max:1.5 pF, Power Dissipation-Max:120 mW, Diode Element Ma...

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Part number or familyMMBD330T1G
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Manufactured byonsemi
Product groupPassives
DescriptionON Semiconductor MMBD330T1G Microwave Mixer Diode, Forward Voltage-Max (VF):600 mV, Diode Capacitance-Max:1.5 pF, Power Dissipation-Max:120 mW, Diode Element Material:SILICON, Diode Type:MIXER DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:30 V, Number of Elements:1, Technology:SCHOTTKY
DescriptionON SEMICONDUCTOR MMBD330T1G SS SC70 SHKY DIO 30V TR RoHS Compliant: Yes

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