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MMBD301LT3G

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onsemi MMBD301LT3G

onsemi MMBD301LT3G overview

ON Semiconductor MMBD301LT3G Microwave Mixer Diode, Forward Voltage-Max (VF):450 mV, Diode Capacitance-Max:1.5 pF, Power Dissipation-Max:200 mW, Diode Element M...

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Part number or familyMMBD301LT3G
Product groupPassives

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Manufactured byonsemi
Product groupPassives
DescriptionON Semiconductor MMBD301LT3G Microwave Mixer Diode, Forward Voltage-Max (VF):450 mV, Diode Capacitance-Max:1.5 pF, Power Dissipation-Max:200 mW, Diode Element Material:SILICON, Diode Type:MIXER DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:30 V, Number of Elements:1, Technology:SCHOTTKY
DescriptionON SEMICONDUCTOR MMBD301LT3G SS SOT23 SHKY DIO 30V TR RoHS Compliant: Yes

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