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MGP19N35CL

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onsemi MGP19N35CL

onsemi MGP19N35CL overview

ON Semiconductor MGP19N35CL Igbt, Collector-Emitter Voltage-Max:380 V, Gate-Emitter Thr Voltage-Max:2 V, Collector Current-Max (IC):19 A, Polarity/Channel Type:...

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Part number or familyMGP19N35CL
Product groupPassives

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Manufactured byonsemi
Product groupPassives
DescriptionON Semiconductor MGP19N35CL Igbt, Collector-Emitter Voltage-Max:380 V, Gate-Emitter Thr Voltage-Max:2 V, Collector Current-Max (IC):19 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, Number of Elements:1
DescriptionON SEMICONDUCTOR MGP19N35CL IGBT T0220 350V CL

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