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Manufactured byonsemi
Product groupPassives
DescriptionON Semiconductor MGB15N35CLT4 Igbt, Collector-Emitter Voltage-Max:380 V, Gate-Emitter Thr Voltage-Max:2.1 V, Collector Current-Max (IC):15 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:2, Number of Elements:1
DescriptionON SEMICONDUCTOR MGB15N35CLT4 IGBT D2PAK 350V 15A TR
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onsemi
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