onsemi MMQA13VT1G overview
ON Semiconductor MMQA13VT1G Transient Suppressor, Clamping Voltage-Max:18.6 V, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:13 V, Diode Element Material:...
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Manufactured byonsemi
Product groupOptoelectrinics
DescriptionON Semiconductor MMQA13VT1G Transient Suppressor, Clamping Voltage-Max:18.6 V, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:13 V, Diode Element Material:SILICON, Breakdown Voltage-Min:12.4 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:COMMON ANODE, 4 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:9.8 V, Number of Elements:4, Technology:AVALANCHE
DescriptionOn Semiconductor MMQA13VT1G Optoelectronics, Lamps & Display
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Optoelectrinics
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