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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDS6630A Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):6.5 A, Drain Current-Max (ID):6.5 A, Drain-source On Resistance-Max:38 mΩ
DescriptionON SEMICONDUCTOR FDS6630A ON Semiconductor FDS6630A MOSFET 1 N-channel 1 W SOIC 8
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onsemi
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