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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor SSN1N45B Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:450 V, Number of Elements:1, Drain Current-Max (ID):500 mA, Drain-source On Resistance-Max:4.25 Ω
DescriptionON Semiconductor SSN1N45B MOSFET, Power MOSFET, N-Channel, B-FET, 450 V, 0.5 A, 4.25 Ω, TO-92
DescriptionON Semiconductor SSN1N45B Power MOSFET, N-Channel, B-FET, 450 V, 0.5 A, 4.25 Ω, TO-92
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