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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FQN1N50C Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (ID):380 mA, Drain-source On Resistance-Max:6 Ω
DescriptionON Semiconductor FQN1N50C MOSFET, Power MOSFET, N-Channel, QFET, 500 V, 0.38 A, 6 Ω, TO-92
DescriptionON Semiconductor FQN1N50C Power MOSFET, N-Channel, QFET®, 500 V, 0.38 A, 6 Ω, TO-92
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onsemi
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