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FDS4435BZ_F085

onsemi · Modules

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onsemi FDS4435BZ_F085

onsemi FDS4435BZ_F085 overview

ON Semiconductor FDS4435BZ_F085 Small Signal Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIO...

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Part number or familyFDS4435BZ_F085
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDS4435BZ_F085 Small Signal Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):8.8 A, Drain Current-Max (ID):8.8 A, Drain-source On Resistance-Max:20 mΩ
DescriptionON Semiconductor FDS4435BZ_F085 MOSFET, P-Channel PowerTrench MOSFET -30V, -8.8A, 20mΩ
DescriptionON Semiconductor FDS4435BZ_F085 P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ

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