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FDS2672_F085

onsemi · Modules

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onsemi FDS2672_F085

onsemi FDS2672_F085 overview

ON Semiconductor FDS2672_F085 Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE...

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Part number or familyFDS2672_F085
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDS2672_F085 Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (Abs) (ID):3.9 A, Drain Current-Max (ID):3.9 A, Drain-source On Resistance-Max:70 mΩ
DescriptionON Semiconductor FDS2672_F085 MOSFET, N-Channel UltraFET Trench 200V, 3.9A, 70mΩ
DescriptionON Semiconductor FDS2672_F085 N-Channel UltraFET® Trench 200V, 3.9A, 70mΩ

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Product group Modules Explore Modules Explore Discrete Semiconductor Products Explore Transistor
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