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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDG6303N Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:25 V, Number of Elements:2, Drain Current-Max (ID):500 mA, Drain-source On Resistance-Max:450 mΩ
DescriptionON Semiconductor FDG6303N Dual N-Channel Digital FET 25V, 0.50A, 0.45Ω
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onsemi
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