onsemi FDG6301N_F085 overview
ON Semiconductor FDG6301N_F085 Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH...
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Part number or familyFDG6301N_F085
Product groupDiscrete Semiconductor Products
Product details
Manufactured byonsemi
Product groupDiscrete Semiconductor Products
DescriptionON Semiconductor FDG6301N_F085 Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:25 V, Number of Elements:2, Drain Current-Max (Abs) (ID):220 mA, Drain Current-Max (ID):220 mA, Drain-source On Resistance-Max:4 Ω
DescriptionON Semiconductor FDG6301N_F085 Dual N-Channel Digital FET 25 V, 0.22 A, 4 Ω
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Discrete Semiconductor Products
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