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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDD1600N10ALZ Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):6.8 A,Drain Current-Max (ID):6.8 A,Drain-source On Resistance-Max:160 mΩ
DescriptionON Semiconductor FDD1600N10ALZ N-Channel PowerTrench® MOSFET 100V, 6.8A, 160mΩ
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onsemi
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