onsemi FDC8602 overview
ON Semiconductor FDC8602 Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT...
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Product groupTransistor
DescriptionON Semiconductor FDC8602 Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:100 V, Number of Elements:2, Drain Current-Max (Abs) (ID):1.2 A, Drain Current-Max (ID):1.2 A, Drain-source On Resistance-Max:350 mΩ
DescriptionON Semiconductor FDC8602 Dual N-Channel Shielded Gate PowerTrench® MOSFET, 100 V, 1.2 A, 350 mΩ
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