Product details
Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MMBV2107LT1G Varactor, Diode Capacitance-Nom:22 pF, Power Dissipation-Max:225 mW, Diode Element Material:SILICON, Breakdown Voltage-Min:30 V, Diode Type:VARIABLE CAPACITANCE DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:30 V, Number of Elements:1
DescriptionON Semiconductor MMBV2107LT1G Discrete Semiconductor, DIODE TUNING SS 30V SOT-23
DescriptionON SEMICONDUCTOR MMBV2107LT1G Small Signal Diode Repetitive Reverse Voltage Max, Vrrm:30V Forward Current Avg Rectified, IF(AV):200mA Power Dissipation, Pd:225mW Package/Case:SOT-23 Leaded Process Compatible:Yes Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
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