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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor BUB323Z Power Bipolar Transistor, Collector-Emitter Voltage-Max:350 V, Collector Current-Max (IC):10 A, Polarity/Channel Type:NPN, Surface Mount:YES, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):500, Transition Frequency-Nom (fT):2 MHz
DescriptionON Semiconductor BUB323Z Discrete Semiconductor, TRANS NPN DARL 350V 10A D2PAK
DescriptionON SEMICONDUCTOR BUB323Z TRANS DARL NPN 10A 350V D2PAK
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onsemi
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