onsemi MMBD353LT3G overview
ON Semiconductor MMBD353LT3G Microwave Mixer Diode, Diode Capacitance-Max:1 pF, Power Dissipation-Max:225 mW, Diode Element Material:SILICON, Diode Type:MIXER D...
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Product typeMicrowave Mixer Diode
DescriptionON Semiconductor MMBD353LT3G Microwave Mixer Diode, Diode Capacitance-Max:1 pF, Power Dissipation-Max:225 mW, Diode Element Material:SILICON, Diode Type:MIXER DIODE, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS, Surface Mount:YES, Number of Elements:2
DescriptionON Semiconductor MMBD353LT3G Microwave Mixer Diode, Diode Capacitance-Max:1 pF, Power Dissipation-Max:225 mW, Diode Element Material:SILICON, Diode Type:MIXER DIODE, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS, Surface Mount:YES, Number of Elements:2
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Microwave Mixer Diode
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