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MMBD101L

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onsemi MMBD101L

onsemi MMBD101L overview

ON Semiconductor MMBD101L Microwave Mixer Diode, Forward Voltage-Max (VF):600 mV, Diode Capacitance-Max:1 pF, Power Dissipation-Max:225 mW, Diode Element Materi...

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Part number or familyMMBD101L
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MMBD101L Microwave Mixer Diode, Forward Voltage-Max (VF):600 mV, Diode Capacitance-Max:1 pF, Power Dissipation-Max:225 mW, Diode Element Material:SILICON, Diode Type:MIXER DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:7 V, Number of Elements:1, Technology:SCHOTTKY
DescriptionON Semiconductor MMBD101L Microwave Mixer Diode, Forward Voltage-Max (VF):600 mV, Diode Capacitance-Max:1 pF, Power Dissipation-Max:225 mW, Diode Element Material:SILICON, Diode Type:MIXER DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:7 V, Number of Elements:1, Technology:SCHOTTKY

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Product group Modules Explore Modules Explore Microwave Mixer Diodes
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