onsemi ESD5Z6.0T1G overview
ON Semiconductor ESD5Z6.0T1G Transient Suppressor, Clamping Voltage-Max:12.4 V, Power Dissipation-Max:200 mW, Diode Element Material:SILICON, Breakdown Voltage-...
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Manufactured byonsemi
Product groupTVS Diodes
DescriptionON Semiconductor ESD5Z6.0T1G Transient Suppressor, Clamping Voltage-Max:12.4 V, Power Dissipation-Max:200 mW, Diode Element Material:SILICON, Breakdown Voltage-Min:6.8 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:6 V, Number of Elements:1, Technology:AVALANCHE
DescriptionOn Semiconductor ESD5Z6.0T1G Interconnect Products, Wire & Cable
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