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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTGD1100LT1 Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:COMPLEX, Number of Terminals:6, DS Breakdown Voltage-Min:8 V, Number of Elements:2, Drain Current-Max (Abs) (ID):3.3 A, Drain Current-Max (ID):3.3 A, Drain-source On Resistance-Max:140 mΩ
DescriptionON Semiconductor NTGD1100LT1 Integrated Circuit, MOSFET N-CHAN 3.3A 8V TSOP6
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onsemi
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Modules
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