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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NID9N05CLT4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:52 V, Number of Elements:1, Drain Current-Max (Abs) (ID):9 A, Drain Current-Max (ID):9 A, Drain-source On Resistance-Max:181 mΩ
DescriptionON Semiconductor NID9N05CLT4 Integrated Circuit, MOSFET N-CH CLAMP 9A 52V DPAK
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onsemi
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