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UESD3.3ST5G

onsemi ยท Integrated Circuit

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onsemi UESD3.3ST5G

onsemi UESD3.3ST5G overview

ON Semiconductor UESD3.3ST5G Transient Suppressor, Clamping Voltage-Max:10.9 V, Power Dissipation-Max:150 mW, Diode Element Material:SILICON, Breakdown Voltage-...

Manufactured byonsemi
Part number or familyUESD3.3ST5G
Product groupIntegrated Circuit

Product details

Manufactured byonsemi
Product groupIntegrated Circuit
DescriptionON Semiconductor UESD3.3ST5G Transient Suppressor, Clamping Voltage-Max:10.9 V, Power Dissipation-Max:150 mW, Diode Element Material:SILICON, Breakdown Voltage-Min:5 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:3.3 V, Number of Elements:1, Technology:AVALANCHE
DescriptionON SEMICONDUCTOR UESD3.3ST5G Integrated Circuit, SENSITIVEHALLEFFECTSWITCHESFORHIGHTEMPERATUREOPERATION

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Manufactured by onsemi View onsemi profile
Product group Integrated Circuit Explore Integrated Circuit Explore Transient Suppressors
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