onsemi SD12T1G overview
ON Semiconductor SD12T1G Transient Suppressor, Clamping Voltage-Max:19 V, Power Dissipation-Max:200 mW, Breakdown Voltage-Nom:14.53 V, Diode Element Material:SI...
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Manufactured byonsemi
Product groupIntegrated Circuit
DescriptionON Semiconductor SD12T1G Transient Suppressor, Clamping Voltage-Max:19 V, Power Dissipation-Max:200 mW, Breakdown Voltage-Nom:14.53 V, Diode Element Material:SILICON, Breakdown Voltage-Min:13.3 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:12 V, Number of Elements:1, Technology:AVALANCHE
DescriptionON SEMICONDUCTOR SD12T1G SOD-323 ZENER TVS RoHS Compliant: Yes
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Integrated Circuit
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