onsemi P6SMB8.2AT3G overview
ON Semiconductor P6SMB8.2AT3G Transient Suppressor, Clamping Voltage-Max:12.1 V, Power Dissipation-Max:550 mW, Breakdown Voltage-Nom:8.2 V, Diode Element Materi...
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Manufactured byonsemi
Product groupIntegrated Circuit
DescriptionON Semiconductor P6SMB8.2AT3G Transient Suppressor, Clamping Voltage-Max:12.1 V, Power Dissipation-Max:550 mW, Breakdown Voltage-Nom:8.2 V, Diode Element Material:SILICON, Breakdown Voltage-Min:7.79 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:7.02 V, Number of Elements:1, Technology:ZENER
DescriptionON SEMICONDUCTOR P6SMB8.2AT3G ZEN SMB TVS 600W 8.2V TR RoHS Compliant: Yes
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| # | Name |
|---|---|
| 1 | P6SMB82AT3G |