onsemi P6SMB18CAT3 overview
ON Semiconductor P6SMB18CAT3 Transient Suppressor, Clamping Voltage-Max:25.2 V, Power Dissipation-Max:550 mW, Breakdown Voltage-Nom:18 V, Diode Element Material...
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Manufactured byonsemi
Product groupIntegrated Circuit
DescriptionON Semiconductor P6SMB18CAT3 Transient Suppressor, Clamping Voltage-Max:25.2 V, Power Dissipation-Max:550 mW, Breakdown Voltage-Nom:18 V, Diode Element Material:SILICON, Breakdown Voltage-Min:17.1 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:BIDIRECTIONAL, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:15.3 V, Number of Elements:1, Technology:ZENER
DescriptionON SEMICONDUCTOR P6SMB18CAT3 Bidirectional Transient Voltage Suppression Diode
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