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P6SMB12CAT3G

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onsemi P6SMB12CAT3G

onsemi P6SMB12CAT3G overview

ON Semiconductor P6SMB12CAT3G Transient Suppressor, Clamping Voltage-Max:16.7 V, Power Dissipation-Max:550 mW, Breakdown Voltage-Nom:12 V, Diode Element Materia...

Manufactured byonsemi
Part number or familyP6SMB12CAT3G
Product groupIntegrated Circuit

Product details

Manufactured byonsemi
Product groupIntegrated Circuit
DescriptionON Semiconductor P6SMB12CAT3G Transient Suppressor, Clamping Voltage-Max:16.7 V, Power Dissipation-Max:550 mW, Breakdown Voltage-Nom:12 V, Diode Element Material:SILICON, Breakdown Voltage-Min:11.4 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:BIDIRECTIONAL, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:10.2 V, Number of Elements:1, Technology:ZENER
DescriptionON SEMICONDUCTOR P6SMB12CAT3G ZEN SMB TVS CLP 600W 12V RoHS Compliant: Yes

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