onsemi NUP8010MNT1G overview
ON Semiconductor NUP8010MNT1G Transient Suppressor, Clamping Voltage-Max:13 V, Breakdown Voltage-Nom:5.6 V, Diode Element Material:SILICON, Breakdown Voltage-Mi...
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Product groupIntegrated Circuit
DescriptionON Semiconductor NUP8010MNT1G Transient Suppressor, Clamping Voltage-Max:13 V, Breakdown Voltage-Nom:5.6 V, Diode Element Material:SILICON, Breakdown Voltage-Min:5.3 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:SEPARATE, 8 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:3 V, Number of Elements:8, Technology:AVALANCHE
DescriptionON SEMICONDUCTOR NUP8010MNT1G 8 Line Low Capacitance Transient Voltage Suppressor DFN8 1.6x1.6mm This integrated
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