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NUP4302MR6T1

onsemi ยท Integrated Circuit

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onsemi NUP4302MR6T1

onsemi NUP4302MR6T1 overview

ON Semiconductor NUP4302MR6T1 Transient Suppressor, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:30 V, Diode Element Material:SILICON, Breakdown Voltage-...

Manufactured byonsemi
Part number or familyNUP4302MR6T1
Product groupIntegrated Circuit

Product details

Manufactured byonsemi
Product groupIntegrated Circuit
DescriptionON Semiconductor NUP4302MR6T1 Transient Suppressor, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:30 V, Diode Element Material:SILICON, Breakdown Voltage-Min:30 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:COMPLEX, Surface Mount:YES, Number of Elements:8, Technology:SCHOTTKY
DescriptionON SEMICONDUCTOR NUP4302MR6T1 Schottky Diode Array for Four Data Line ESD Protection

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Product group Integrated Circuit Explore Integrated Circuit Explore Transient Suppressors
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