onsemi NTJD4158CT1G overview
ON Semiconductor NTJD4158CT1G Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ...
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Product groupIntegrated Circuit
DescriptionON Semiconductor NTJD4158CT1G Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:6, DS Breakdown Voltage-Min:30 V, Number of Elements:2, Drain Current-Max (Abs) (ID):250 mA, Drain Current-Max (ID):250 mA, Drain-source On Resistance-Max:2.5 Ω
DescriptionON SEMICONDUCTOR NTJD4158CT1G Small Signal MOSFET 30 V/ -20 V, +0.25/-0.88 A, Complementary, SC-88
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Integrated Circuit
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