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NGD8201N

onsemi ยท Integrated Circuit

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onsemi NGD8201N

onsemi NGD8201N overview

ON Semiconductor NGD8201N Igbt, Collector-Emitter Voltage-Max:435 V, Gate-Emitter Thr Voltage-Max:2.3 V, Collector Current-Max (IC):20 A, Polarity/Channel Type:...

Manufactured byonsemi
Part number or familyNGD8201N
Product groupIntegrated Circuit

Product details

Manufactured byonsemi
Product groupIntegrated Circuit
DescriptionON Semiconductor NGD8201N Igbt, Collector-Emitter Voltage-Max:435 V, Gate-Emitter Thr Voltage-Max:2.3 V, Collector Current-Max (IC):20 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:2, Number of Elements:1
DescriptionOn Semiconductor NGD8201N Integrated Circuit

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Product group Integrated Circuit Explore Integrated Circuit Explore Transistor Explore IGBTs
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