onsemi NGD18N40CLB overview
ON Semiconductor NGD18N40CLB Igbt, Collector-Emitter Voltage-Max:430 V, Gate-Emitter Thr Voltage-Max:1.9 V, Collector Current-Max (IC):15 A, Polarity/Channel Ty...
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Product groupIntegrated Circuit
DescriptionON Semiconductor NGD18N40CLB Igbt, Collector-Emitter Voltage-Max:430 V, Gate-Emitter Thr Voltage-Max:1.9 V, Collector Current-Max (IC):15 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:2, Number of Elements:1
DescriptionON SEMICONDUCTOR NGD18N40CLB Ignition IGBT 18 Amps, 400 Volts
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