Product details
Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor TIG111GMH Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):32 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO
DescriptionON Semiconductor TIG111GMH IGBT, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):32 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO
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onsemi
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