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NGP8203N

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onsemi NGP8203N

onsemi NGP8203N overview

ON Semiconductor NGP8203N Igbt, Collector-Emitter Voltage-Max:440 V, Gate-Emitter Thr Voltage-Max:2.1 V, Collector Current-Max (IC):20 A, Polarity/Channel Type:...

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Part number or familyNGP8203N
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NGP8203N Igbt, Collector-Emitter Voltage-Max:440 V, Gate-Emitter Thr Voltage-Max:2.1 V, Collector Current-Max (IC):20 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, Number of Elements:1
DescriptionON Semiconductor NGP8203N IGBT, Collector-Emitter Voltage-Max:440 V, Gate-Emitter Thr Voltage-Max:2.1 V, Collector Current-Max (IC):20 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, Number of Elements:1

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