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NGD8209NT4G

onsemi ยท Modules

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onsemi NGD8209NT4G

onsemi NGD8209NT4G overview

ON Semiconductor NGD8209NT4G Igbt, Collector-Emitter Voltage-Max:445 V, Gate-Emitter Thr Voltage-Max:2 V, Collector Current-Max (IC):12 A, Polarity/Channel Type...

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Part number or familyNGD8209NT4G
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NGD8209NT4G Igbt, Collector-Emitter Voltage-Max:445 V, Gate-Emitter Thr Voltage-Max:2 V, Collector Current-Max (IC):12 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES
DescriptionON Semiconductor NGD8209NT4G IGBT, Collector-Emitter Voltage-Max:445 V, Gate-Emitter Thr Voltage-Max:2 V, Collector Current-Max (IC):12 A, Polarity/Channel Type:N-CHANNEL, Surface mount:YES

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Product group Modules Explore Modules Explore Transistor Explore IGBTs
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