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NGB8206ANSL3G

onsemi ยท Modules

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onsemi NGB8206ANSL3G

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ON Semiconductor NGB8206ANSL3G Igbt, Collector-Emitter Voltage-Max:390 V, Gate-Emitter Thr Voltage-Max:2.1 V, Collector Current-Max (IC):20 A, Polarity/Channel ...

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Part number or familyNGB8206ANSL3G
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NGB8206ANSL3G Igbt, Collector-Emitter Voltage-Max:390 V, Gate-Emitter Thr Voltage-Max:2.1 V, Collector Current-Max (IC):20 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES
DescriptionON Semiconductor NGB8206ANSL3G IGBT, Collector-Emitter Voltage-Max:390 V, Gate-Emitter Thr Voltage-Max:2.1 V, Collector Current-Max (IC):20 A, Polarity/Channel Type:N-CHANNEL, Surface mount:YES

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Product group Modules Explore Modules Explore Transistor Explore IGBTs
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