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MMG05N60DT1

onsemi · Modules

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onsemi MMG05N60DT1

onsemi MMG05N60DT1 overview

ON Semiconductor MMG05N60DT1 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):500 mA, Polarity/Channel Ty...

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Part number or familyMMG05N60DT1
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MMG05N60DT1 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):500 mA, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, Number of Elements:1
DescriptionON Semiconductor MMG05N60DT1 IGBT, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):500 mΩ, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, Number of Elements:1

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