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MGW21N60ED

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onsemi MGW21N60ED

onsemi MGW21N60ED overview

ON Semiconductor MGW21N60ED Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:8 V, Collector Current-Max (IC):31 A, Polarity/Channel Type:...

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Part number or familyMGW21N60ED
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MGW21N60ED Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:8 V, Collector Current-Max (IC):31 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
DescriptionON Semiconductor MGW21N60ED IGBT, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:8 V, Collector Current-Max (IC):31 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1

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