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MGW12N120D

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onsemi MGW12N120D

onsemi MGW12N120D overview

ON Semiconductor MGW12N120D Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:8 V, Collector Current-Max (IC):20 A, Polarity/Channel Type...

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Part number or familyMGW12N120D
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MGW12N120D Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:8 V, Collector Current-Max (IC):20 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
DescriptionON Semiconductor MGW12N120D IGBT, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:8 V, Collector Current-Max (IC):20 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1

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