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MGW12N120

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onsemi MGW12N120

onsemi MGW12N120 overview

ON Semiconductor MGW12N120 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:8 V, Collector Current-Max (IC):20 A, Polarity/Channel Type:...

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Part number or familyMGW12N120
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MGW12N120 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:8 V, Collector Current-Max (IC):20 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1
DescriptionON Semiconductor MGW12N120 IGBT, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:8 V, Collector Current-Max (IC):20 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1

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Product group Modules Explore Modules Explore Transistor Explore IGBTs
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