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MGP7N60ED

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onsemi MGP7N60ED

onsemi MGP7N60ED overview

ON Semiconductor MGP7N60ED Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:8 V, Collector Current-Max (IC):10 A, Polarity/Channel Type:N...

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Part number or familyMGP7N60ED
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MGP7N60ED Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:8 V, Collector Current-Max (IC):10 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
DescriptionON Semiconductor MGP7N60ED IGBT, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:8 V, Collector Current-Max (IC):10 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1

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