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MGP7N60E

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onsemi MGP7N60E

onsemi MGP7N60E overview

ON Semiconductor MGP7N60E Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:8 V, Collector Current-Max (IC):10 A, Polarity/Channel Type:N-...

Manufactured byonsemi
Part number or familyMGP7N60E
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MGP7N60E Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:8 V, Collector Current-Max (IC):10 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
DescriptionON Semiconductor MGP7N60E IGBT, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:8 V, Collector Current-Max (IC):10 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1

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Product group Modules Explore Modules Explore Transistor Explore IGBTs
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