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MGB15N38CLT4

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onsemi MGB15N38CLT4

onsemi MGB15N38CLT4 overview

ON Semiconductor MGB15N38CLT4 Igbt, Collector-Emitter Voltage-Max:350 V, Gate-Emitter Thr Voltage-Max:2.1 V, Collector Current-Max (IC):15 A, Polarity/Channel T...

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Part number or familyMGB15N38CLT4
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MGB15N38CLT4 Igbt, Collector-Emitter Voltage-Max:350 V, Gate-Emitter Thr Voltage-Max:2.1 V, Collector Current-Max (IC):15 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1
DescriptionON Semiconductor MGB15N38CLT4 IGBT, Collector-Emitter Voltage-Max:350 V, Gate-Emitter Thr Voltage-Max:2.1 V, Collector Current-Max (IC):15 A, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1

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